Giovanni Nastasi's research interests concern mathematical models and simulations for charge transport in low-dimensional structures and for field effect transistor type devices.
In particular, he deals with semiclassical Boltzmann equations, drift-diffusion models, hydrodynamic models and the study and simulation of quantum effects in nanoscale devices.
Furthermore, he deals with simulations with Monte Carlo, Discontinuous Galerkin and finite difference methods.
The methodologies mentioned above find application in the simulation of electronic devices such as field effect transistors.
Furthermore, he deals with deterministic and stochastic models with simulations for the study of epidemics.